License agreement provides Magnachip access to Navitas’ GeneSiC™ Gen 4 and Gen 5 SiC technologies spanning 1200 V, 2300 V, 3300 V and higher voltages, supported by Navitas’ supply chain and materials ecosystem

Targeting energy and grid infrastructure, energy storage, industrial electrification, automotive and other high-power systems in Korea

TORRANCE, Calif. and SEOUL, South Korea, July 23, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor Corporation (NASDAQ:NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, and Magnachip Semiconductor Corporation (NYSE:MX), a designer and manufacturer of analog and mixed-signal power semiconductor platform solutions, today announced a strategic partnership to accelerate adoption of SiC technologies in high-voltage (HV) and ultra-high-voltage (UHV) power markets. 

Under the terms of the agreement, Magnachip will license Navitas’ GeneSiC™ Trench-Assisted Planar™ (TAP) technology to enter the HV and UHV SiC markets. The license covers 1200 V, 2300 V, 3300 V and higher voltage GeneSiC technologies, enabling Magnachip to build on Navitas’ proven SiC device platforms for next-generation power conversion applications.  

Magnachip will also gain access to Navitas’ SiC supply chain and materials ecosystem, supporting faster market entry. At the same time, the technology is planned to be ported, qualified, and internalized at Magnachip’s fab in  South Korea. The companies expect this approach to help accelerate Magnachip’s entry into SiC while maintaining continuity with Navitas’ established technology and materials base. The licensed technologies are expected to support next-generation applications including energy and grid infrastructure, energy storage, industrial electrification, automotive and other high-power systems. 

The companies also stated that the agreement encompasses broader engagement beyond SiC. Additional areas of partnership are expected to be detailed and announced later.